Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating dotted diffusion

ABSTRACT

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/831,362, filed on Dec. 4, 2017, which is a divisional of U.S. patentapplication Ser. No. 14/491,045, filed on Sep. 19, 2014, now U.S. Pat.No. 9,837,576 issued on Dec. 5, 2017, the entire contents of which arehereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present disclosure are in the field of renewableenergy and, in particular, methods of fabricating solar cell emitterregions with differentiated P-type and N-type architectures andincorporating dotted diffusion, and the resulting solar cells.

BACKGROUND

Photovoltaic cells, commonly known as solar cells, are well knowndevices for direct conversion of solar radiation into electrical energy.Generally, solar cells are fabricated on a semiconductor wafer orsubstrate using semiconductor processing techniques to form a p-njunction near a surface of the substrate. Solar radiation impinging onthe surface of, and entering into, the substrate creates electron andhole pairs in the bulk of the substrate. The electron and hole pairsmigrate to p-doped and n-doped regions in the substrate, therebygenerating a voltage differential between the doped regions. The dopedregions are connected to conductive regions on the solar cell to directan electrical current from the cell to an external circuit coupledthereto.

Efficiency is an important characteristic of a solar cell as it isdirectly related to the capability of the solar cell to generate power.Likewise, efficiency in producing solar cells is directly related to thecost effectiveness of such solar cells. Accordingly, techniques forincreasing the efficiency of solar cells, or techniques for increasingthe efficiency in the manufacture of solar cells, are generallydesirable. Some embodiments of the present disclosure allow forincreased solar cell manufacture efficiency by providing novel processesfor fabricating solar cell structures. Some embodiments of the presentdisclosure allow for increased solar cell efficiency by providing novelsolar cell structures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-6 illustrate cross-sectional and plan views of various stages inthe fabrication of a solar cell, in accordance with an embodiment of thepresent disclosure, wherein:

FIG. 1 illustrates a cross-sectional view of a stage in solar cellfabrication involving forming a first silicon layer of a firstconductivity type on a first thin dielectric layer formed on a backsurface of a substrate;

FIG. 2 illustrates a cross-sectional view and corresponding plan view ofthe structure of FIG. 1 following patterning of the insulating layer andthe first silicon layer to form a first silicon region of the firstconductivity type having an insulating cap thereon;

FIG. 3 illustrates a cross-sectional view of the structure of FIG. 2following texturing of the surfaces of the trenches to form texturizedrecesses or trenches having texturized surfaces within the substrate;

FIG. 4 illustrates a cross-sectional view and corresponding plan view ofthe structure of FIG. 3 following formation of second and third thindielectric layers and a second silicon layer;

FIG. 5 illustrates a cross-sectional view and corresponding plan view ofthe structure of FIG. 4 following patterning of the second silicon layerto form isolated second silicon regions and to form a contact opening inregions of the second silicon layer above the insulating cap of thefirst silicon regions; and

FIG. 6 illustrates a cross-sectional view of the structure of FIG. 5following formation of a plurality of conductive contacts.

FIG. 7 is a flowchart listing operations in a method of fabricating asolar cell as corresponding to FIGS. 1-6, in accordance with anembodiment of the present disclosure.

FIGS. 8A and 8B illustrate cross-sectional views of various stages inthe fabrication of another solar cell, in accordance with anotherembodiment of the present disclosure.

FIG. 9 is a flowchart listing operations in another method offabricating a solar cell, in accordance with an embodiment of thepresent disclosure.

DETAILED DESCRIPTION

The following detailed description is merely illustrative in nature andis not intended to limit the embodiments of the subject matter or theapplication and uses of such embodiments. As used herein, the word“exemplary” means “serving as an example, instance, or illustration.”Any implementation described herein as exemplary is not necessarily tobe construed as preferred or advantageous over other implementations.Furthermore, there is no intention to be bound by any expressed orimplied theory presented in the preceding technical field, background,brief summary or the following detailed description.

This specification includes references to “one embodiment” or “anembodiment.” The appearances of the phrases “in one embodiment” or “inan embodiment” do not necessarily refer to the same embodiment.Particular features, structures, or characteristics may be combined inany suitable manner consistent with this disclosure.

Terminology. The following paragraphs provide definitions and/or contextfor terms found in this disclosure (including the appended claims):

“Comprising.” This term is open-ended. As used in the appended claims,this term does not foreclose additional structure or steps.

“Configured To.” Various units or components may be described or claimedas “configured to” perform a task or tasks. In such contexts,“configured to” is used to connote structure by indicating that theunits/components include structure that performs those task or tasksduring operation. As such, the unit/component can be said to beconfigured to perform the task even when the specified unit/component isnot currently operational (e.g., is not on/active). Reciting that aunit/circuit/component is “configured to” perform one or more tasks isexpressly intended not to invoke 35 U.S.C. § 112, sixth paragraph, forthat unit/component.

“First,” “Second,” etc. As used herein, these terms are used as labelsfor nouns that they precede, and do not imply any type of ordering(e.g., spatial, temporal, logical, etc.). For example, reference to a“first” solar cell does not necessarily imply that this solar cell isthe first solar cell in a sequence; instead the term “first” is used todifferentiate this solar cell from another solar cell (e.g., a “second”solar cell).

“Coupled”—The following description refers to elements or nodes orfeatures being “coupled” together. As used herein, unless expresslystated otherwise, “coupled” means that one element/node/feature isdirectly or indirectly joined to (or directly or indirectly communicateswith) another element/node/feature, and not necessarily mechanically.

“Inhibit”—As used herein, inhibit is used to describe a reducing orminimizing effect. When a component or feature is described asinhibiting an action, motion, or condition it may completely prevent theresult or outcome or future state completely. Additionally, “inhibit”can also refer to a reduction or lessening of the outcome, performance,and/or effect which might otherwise occur. Accordingly, when acomponent, element, or feature is referred to as inhibiting a result orstate, it need not completely prevent or eliminate the result or state.

In addition, certain terminology may also be used in the followingdescription for the purpose of reference only, and thus are not intendedto be limiting. For example, terms such as “upper”, “lower”, “above”,and “below” refer to directions in the drawings to which reference ismade. Terms such as “front”, “back”, “rear”, “side”, “outboard”, and“inboard” describe the orientation and/or location of portions of thecomponent within a consistent but arbitrary frame of reference which ismade clear by reference to the text and the associated drawingsdescribing the component under discussion. Such terminology may includethe words specifically mentioned above, derivatives thereof, and wordsof similar import.

Methods of fabricating solar cell emitter regions with differentiatedP-type and N-type architectures and incorporating dotted diffusion, andthe resulting solar cells, are described herein. In the followingdescription, numerous specific details are set forth, such as specificprocess flow operations, in order to provide a thorough understanding ofembodiments of the present disclosure. It will be apparent to oneskilled in the art that embodiments of the present disclosure may bepracticed without these specific details. In other instances, well-knownfabrication techniques, such as lithography and patterning techniques,are not described in detail in order to not unnecessarily obscureembodiments of the present disclosure. Furthermore, it is to beunderstood that the various embodiments shown in the figures areillustrative representations and are not necessarily drawn to scale.

Disclosed herein are solar cells. In one embodiment, a solar cellincludes a substrate having a light-receiving surface and a backsurface. A first polycrystalline silicon emitter region of a firstconductivity type is disposed on a first thin dielectric layer disposedon the back surface of the substrate. A second polycrystalline siliconemitter region of a second, different, conductivity type is disposed ona second thin dielectric layer disposed in a plurality of non-continuoustrenches in the back surface of the substrate.

Also disclosed herein are methods of fabricating solar cells. In oneembodiment, a method of fabricating a solar cell involves forming afirst silicon layer of a first conductivity type on a first thindielectric layer formed on a back surface of a substrate to provide afirst emitter region of the solar cell. The substrate has alight-receiving surface and the back surface. The method also involvesforming an insulator layer on the first silicon layer. The method alsoinvolves forming a plurality of openings in the insulator layer and thefirst silicon layer and a corresponding plurality of non-continuoustrenches in the back surface of the substrate. The method also involvesforming a second silicon layer of a second, different, conductivity typeon a second thin dielectric layer formed in the plurality ofnon-continuous trenches to provide a second emitter region of the solarcell.

In another embodiment, a method of fabricating alternating N-type andP-type emitter regions of a solar cell involves forming a P-type siliconlayer on a first thin dielectric layer formed on a back surface of anN-type monocrystalline silicon substrate. The method also involvesforming an insulating layer on the P-type silicon layer. The method alsoinvolves patterning the insulating layer and the P-type silicon layer bylaser ablation to form P-type silicon regions having an insulating capthereon and to expose a plurality of regions of the N-typemonocrystalline silicon substrate, each of the plurality of regions ofthe N-type monocrystalline silicon substrate having a plurality ofnon-continuous trenches formed in the N-type monocrystalline siliconsubstrate. The method also involves forming a second thin dielectriclayer on exposed sides of the P-type silicon regions. The method alsoinvolves forming an N-type silicon layer on the second thin dielectriclayer, on the insulating cap of the P-type silicon regions, and on athird thin dielectric layer formed in each of the plurality ofnon-continuous trenches of each of the plurality of regions of theN-type monocrystalline silicon substrate. The method also involvespatterning the N-type silicon layer to form isolated N-type siliconregions and to form contact openings in regions of the N-type siliconlayer above the insulating cap of the P-type silicon regions, eachisolated N-type silicon region electrically coupled to a correspondingone of the plurality of regions of the N-type monocrystalline siliconsubstrate. The method also involves forming a plurality of conductivecontacts, each conductive contact electrically connected to one of theP-type silicon regions or one of the isolated N-type silicon regions.

One or more embodiments described herein are directed to the fabricationof a solar cell with dotted diffusion. In an embodiment, implementing adotted-diffusion design with a differentiated P-type and N-typearchitecture enables the fabrication of laser patterned emitters withmore stable and lower reverse bias breakdown. The dotted diffusion maybe fabricated using laser ablation, as described in greater detailbelow. However, in other embodiment, non-laser island diffusionformation may also be implemented, e.g., through the use of printedetchants, or through masking and etching approaches.

To provide context, using a laser to pattern an emitter in a traditionalsolar cell architecture may be challenging since, with a linear emitter,a significant area of material requires removal. The removal may bedifficult to perform and may pose a units per hour (UPH) challenge whendiode-pumped solid state (DPSS) lasers are used. Some designs also relyon an edge vertical sidewall junction as a pathway for reverse-biasbreakdown, and therefore need to be very uniform. Use of a “clean” laserprocess to form such an edge vertical sidewall junction may be difficultwhere overlapping dots are used, as would normally be the case for apulsed laser forming a continuous emitter. Reverse break-down voltage isalso proportional to the length of the butting junction that serves asthe break-down region.

Addressing one or more of the above issues, in an embodiment, moving toa dotted design, where the spot size can be easily controlled, andhigh-densities of dots can be placed, may lead to improved break-downperformance of the device. In particular embodiments, forming an arrayof dots as the emitter can enable faster laser processing, more uniformablation (e.g., non-overlapping dots) for better sidewalls, use oflower-energies (e.g., opens up UV laser opens, which is also better forside-wall uniformity), and can improve the breakdown-voltage. Otherbenefits of using a dotted emitter design with a differentiated P-typeand N-type architecture may include one or more of (1) increasingjunction area to enable lower breakdown voltage; (2) eliminating a needfor overlap to form a continuous emitter; (3) improving UPH issues; (4)improving edge-overlap and control issue; (5) reducing island contactingissues by using blanket N-type amorphous silicon (n-a-Si) deposition;(6) enabling the formation of single, double, triples etc. rows ofdiscrete N-type regions of the substrate (‘N-islands’); (7) enablingtuning of island size; and/or (8) enabling use of a UV or CO₂ basedlaser source to cleanly remove a oxide and create clean side-walls,without significant damage to the emitter.

In a first exemplary process flow, FIGS. 1-6 illustrate cross-sectionalviews of various stages in the fabrication of a solar cell, inaccordance with an embodiment of the present disclosure. FIG. 7 is aflowchart 700 listing operations in a method of fabricating a solar cellas corresponding to FIGS. 1-6, in accordance with an embodiment of thepresent disclosure.

Referring to FIG. 1 and corresponding operation 702 of flowchart 700, amethod of fabricating alternating N-type and P-type emitter regions of asolar cell involves forming a first silicon layer 106 of a firstconductivity type on a first thin dielectric layer 104 formed on a backsurface of a substrate 102.

In an embodiment, the substrate 102 is a monocrystalline siliconsubstrate, such as a bulk single crystalline N-type doped siliconsubstrate. It is to be understood, however, that substrate 102 may be alayer, such as a multi-crystalline silicon layer, disposed on a globalsolar cell substrate. In an embodiment, the first thin dielectric layer104 is a thin oxide layer such as a tunnel dielectric silicon oxidelayer having a thickness of approximately 2 nanometers or less.

In an embodiment, the first silicon layer 106 is a polycrystallinesilicon layer that is doped to have the first conductivity type eitherthrough in situ doping, post deposition implanting, or a combinationthereof. In another embodiment the first silicon layer 106 is anamorphous silicon layer such as a hydrogenated silicon layer representedby a-Si:H which is implanted with dopants of the first conductivity typesubsequent to deposition of the amorphous silicon layer. In one suchembodiment, the first silicon layer 106 is subsequently annealed (atleast at some subsequent stage of the process flow) to ultimately form apolycrystalline silicon layer. In an embodiment, for either apolycrystalline silicon layer or an amorphous silicon layer, if postdeposition implantation is performed, the implanting is performed byusing ion beam implantation or plasma immersion implantation. In onesuch embodiment, a shadow mask is used for the implanting. In a specificembodiment, the first conductivity type is P-type (e.g., formed usingboron impurity atoms).

Referring again to FIG. 1 and now to corresponding operation 704 offlowchart 700, an insulating layer 108 is formed on the first siliconlayer 106. In an embodiment the insulating layer 108 includes silicondioxide.

Referring to FIG. 2 and corresponding operation 706 of flowchart 700,the insulating layer 108 and the first silicon layer 106 are patternedto form a first silicon region 110 of the first conductivity type havingan insulating cap 112 thereon. In an embodiment, a laser ablationprocess (e.g., direct write) is used to pattern the insulating layer 108and the first silicon layer 106. Where applicable, in one embodiment,the first thin dielectric layer 104 is also patterned in the process, asis depicted in FIG. 2. It is to be appreciated that the cross-sectionalview of FIG. 2 is taken along the a-a′ axis of the plan view of FIG. 2.

In an embodiment, the laser ablation process of FIG. 2 exposes aplurality of regions 109 of an N-type monocrystalline silicon substrate102. Each of the plurality of regions 109 of the N-type monocrystallinesilicon substrate 102 can be viewed as a plurality of non-continuoustrenches 111 (seen in the cross-sectional view) having a spacing 112between trenches (spacing seen in the plan view) formed in the N-typemonocrystalline silicon substrate 102. The option that the trenches 109have a depth or thickness 111 into the substrate is depicted in thecross-sectional view of FIG. 2. In one such embodiment, each of theplurality of non-continuous trenches 109 is formed to a non-zero depth111 less than approximately 10 microns into the substrate 102 upon laserablation.

As mentioned above, the plurality of openings and the correspondingplurality of non-continuous trenches 109 may be formed by applying alaser ablation process. In an embodiment, using the laser ablationprocess provides each of the plurality of non-continuous trenches with awidth (e.g., maximum diameter) approximately in the range of 30-60microns. In one such embodiment, successive ones of the plurality ofnon-continuous trenches 109 is formed as spaced apart at a distanceapproximately in the range of 50-300 microns. A distance of much lessthan 50 microns may lead to possibility of overlap of trenches, whichmay not be desirable, as described above. On the other hand, a distanceof much greater than 300 microns may lead to increased contactresistance for a contact subsequently formed and linking several of thetrenches 109. In an embodiment, the laser ablation process involvesusing a laser beam having an approximately Gaussian profile or having anapproximately flat-top profile.

Referring to FIG. 3, optionally, the surfaces of the trenches 109 may betexturized to form texturized recesses or trenches 114 having texturizedsurfaces 116 within the substrate 102. In a same or similar process, alight receiving surface 101 of the substrate 102 may also be texturized,as is depicted in FIG. 3. In an embodiment, a hydroxide-based wetetchant is used to form at least a portion of the recesses 114 and/or totexturize exposed portions of the substrate 102. A texturized surfacemay be one which has a regular or an irregular shaped surface forscattering incoming light, decreasing the amount of light reflected offof the light-receiving and/or exposed surfaces of the solar cell. It isto be appreciated, however, that the texturizing of the back surface andeven the recess formation may be omitted from the process flow. It isalso to be appreciated that, if applied, the texturizing may increasethe depth of the trenches 109 from the originally formed depth.

Referring to FIG. 4 and corresponding operation 708 of flowchart 700, asecond thin dielectric layer 118 is formed on exposed sides of the firstsilicon regions 118. In an embodiment, the second thin dielectric layer118 is formed in an oxidation process and is a thin oxide layer such asa tunnel dielectric silicon oxide layer having a thickness ofapproximately 2 nanometers or less. In another embodiment, the secondthin dielectric layer 118 is formed in a deposition process and is athin silicon nitride layer or silicon oxynitride layer. It is to beappreciated that the cross-sectional view of FIG. 4 is taken along theb-b′ axis of the plan view of FIG. 4.

Referring again to FIG. 4 and now to corresponding operation 710 offlowchart 700, a second silicon layer 120 of a second, different,conductivity type is formed on a third thin dielectric layer 122 formedon the exposed portions of the back surface of the substrate 102 (e.g.,formed in each of the plurality of non-continuous trenches 109 of eachof the plurality of regions of the N-type monocrystalline siliconsubstrate 102), and on the second thin dielectric layer 118 and theinsulating cap 112 of the first silicon regions 110. As seen in both thecross-sectional view and the plan view, the second silicon layer 120covers (from a top-down perspective) the trench regions 109.

Referring again to FIG. 4, corresponding thin dielectric layer 122′ andsecond silicon layer 120′ of the second conductivity type may also beformed on the light-receiving surface 101 of the substrate 102, in sameor similar process operations, as is also depicted in FIG. 4.Additionally, although not depicted, an ARC layer may be formed on thecorresponding second silicon layer 120′.

In an embodiment, the third thin dielectric layer 122 is formed in anoxidation process and is a thin oxide layer such as a tunnel dielectricsilicon oxide layer having a thickness of approximately 2 nanometers orless. In an embodiment, the second silicon layer 120 is apolycrystalline silicon layer that is doped to have the secondconductivity type either through in situ doping, post depositionimplanting, or a combination thereof. In another embodiment the secondsilicon layer 120 is an amorphous silicon layer such as a hydrogenatedsilicon layer represented by a-Si:H which is implanted with dopants ofthe second conductivity type subsequent to deposition of the amorphoussilicon layer. In one such embodiment, the second silicon layer 120 issubsequently annealed (at least at some subsequent stage of the processflow) to ultimately form a polycrystalline silicon layer. In anembodiment, for either a polycrystalline silicon layer or an amorphoussilicon layer, if post deposition implantation is performed, theimplanting is performed by using ion beam implantation or plasmaimmersion implantation. In one such embodiment, a shadow mask is usedfor the implanting. In a specific embodiment, the second conductivitytype is N-type (e.g., formed using phosphorus atoms or arsenic impurityatoms).

Referring to FIG. 5 and corresponding operation 712 of flowchart 700,the second silicon layer 120 is patterned to form isolated secondsilicon regions 124 of the second conductivity type and to form acontact opening 126 in regions of the second silicon layer 120 above theinsulating cap 112 of the first silicon regions 110. In an embodiment,each isolated N-type silicon region 124 is electrically coupled to acorresponding one (or more) of the plurality of regions 109 of theN-type monocrystalline silicon substrate 102. In an embodiment, discreteregions of silicon 125 may remain as an artifact of the patterningprocess. In an embodiment, a laser ablation process is used to patternthe second silicon layer 120. It is to be appreciated that thecross-sectional view of FIG. 5 is taken along the c-c′ axis of the planview of FIG. 5.

Referring again to FIG. 5, the insulating cap 112 is patterned throughthe contact openings 126 to expose portions of the first silicon regions110. In an embodiment, the insulating cap 112 is patterned using a laserablation process. For example, in one embodiment, a first laser pass isused to pattern the second silicon layer 120, including forming contactopening 126. A second laser pass in the same location as contact opening126 is the used to pattern the insulating cap 112. As seen from the planview of FIG. 5, in an embodiment, a single isolated region 124 (e.g., asingle isolated N-type silicon region) covers, from a top-downperspective, a strip of a plurality of the openings 109 (a strip ofthree openings per single isolated region 124 is shown in FIG. 5).

Referring to FIG. 6 and corresponding operation 714 of flowchart 700, aplurality of conductive contacts is formed, each conductive contactelectrically connected to one of the P-type silicon regions or one ofthe isolated N-type silicon regions. In an exemplary embodiment, a metalseed layer 128 is formed on the exposed portions of the first siliconregions 110 and on the isolated second silicon regions 124. A metallayer 130 is then plated on the metal seed layer to form conductivecontacts 132 and 134, respectively, for the first silicon regions 110and the isolated second silicon regions 124. In an embodiment, the metalseed layer 128 is an aluminum-based metal seed layer, and the metallayer 130 is a copper layer. In an embodiment, a mask is first formed toexpose only the exposed portions of the first silicon regions 110 andthe isolated second silicon regions 124 in order to direct the metalseed layer 128 formation to restricted locations.

Thus, one or more embodiments described herein are directed to formingP+ and N+ polysilicon emitter regions for a solar cell where therespective structures of the P+ and N+ polysilicon emitter regions aredifferent from one another. Such an approach can be implemented tosimplify a solar cell fabrication process. Furthermore, the resultingstructure may provide a lower breakdown voltage and lower power lossesassociated as compared with other solar cell architectures.

With reference again to FIG. 6, in an embodiment, a finalized solar cellincludes a substrate 102 having a light-receiving surface 101 and acorresponding back surface. A first polycrystalline silicon emitterregion 110 of a first conductivity type is disposed on a first thindielectric layer 104 disposed on the back surface of the substrate 102.A second polycrystalline silicon emitter region 124 of a second,different, conductivity type is disposed on a second thin dielectriclayer 122 disposed in a plurality of non-continuous trenches (shown asrecess in cross-sectional view of FIG. 6) in the back surface of thesubstrate 102. In an embodiment, the substrate 102 is an N-typemonocrystalline silicon substrate, the first conductivity type isP-type, and the second conductivity type is N-type. In an embodiment,the solar cell is a back contact solar cell, as is depicted in FIG. 6.

In an embodiment, each of the plurality of non-continuous trenches has awidth approximately in the range of 30-60 microns, as was described inassociation with FIG. 2. In an embodiment, successive ones of theplurality of non-continuous trenches are spaced apart at a distanceapproximately in the range of 50-300 microns, as was also described inassociation with FIG. 2. In an embodiment, each of the plurality ofnon-continuous trenches has a depth approximately in the range of 0.5-10microns, as taken from the back surface and into the substrate 102. Thefinal trench depth may be formed from laser ablation, a texturizingprocess, or both. In an embodiment, each of the non-continuous trencheshas an approximately circular shape, as depicted in the plan views ofFIGS. 2, 4 and 5. As depicted in FIG. 6, each of the non-continuoustrenches has a texturized surface.

Referring again to FIG. 6, in an embodiment, the solar cell furtherincludes a third thin dielectric layer 118 disposed laterally directlybetween the first 110 and second 124 polycrystalline silicon emitterregions. In an embodiment, the solar cell further includes a firstconductive contact structure 130 electrically connected to the firstpolycrystalline silicon emitter region 110, and a second conductivecontact structure 134 electrically connected to the secondpolycrystalline silicon emitter region 124. In an embodiment, the solarcell further includes an insulator layer 112 disposed on the firstpolycrystalline silicon emitter region 110. The first conductive contactstructure 130 is disposed through the insulator layer 112. In one suchembodiment, a portion of the second polycrystalline silicon emitterregion 124 overlaps the insulator layer 112 but is separated from thefirst conductive contact structure 130, as is depicted in FIG. 6. In afurther embodiment, a polycrystalline silicon region 125 of the secondconductivity type is disposed on the insulator layer 112, and the firstconductive contact structure 130 is disposed through the polycrystallinesilicon region 125 of the second conductivity type and through theinsulator layer 112, as is depicted in FIG. 6.

In another aspect, one or more embodiments described herein are directedto silicide formation for solar cell fabrication. The silicide materialcan be incorporated into a final solar cell structure, such as a backcontact or front contact solar cell structure. Using a silicide materialfor metallization of a polysilicon emitter region of a solar cell canprovide a simpler metallization process for such solar cells. Forexample, as described in greater detail below, a silicide technique isused to effectively remove a masking operation from a metal seed layerprocess for contact formation. Furthermore, alignment issues can bereduced since the silicide process is a self-aligned process.

In a second exemplary process flow, FIGS. 8A-8B illustratecross-sectional views of various stages in the fabrication of anothersolar cell, in accordance with another embodiment of the presentdisclosure. The second exemplary process flow moves from the structureof FIG. 5 to the structure of FIG. 8A.

Referring to FIG. 8A, subsequent to patterning the second silicon layer120 and the insulating cap 112 (as described in association with FIG.5), a metal silicide layer 828 is formed from exposed surfaces of thepatterned second silicon layer and from the exposed portions of thefirst silicon regions 110. In an embodiment, the metal silicide layer isformed by forming a blanket metal layer over the entire structure ofFIG. 5, heating the blanket metal layer to react with exposed siliconand form a metal silicide. Unreacted portions of the blanket metal layerare then removed, e.g., using a wet chemical clean process that isselective to the formed silicide material. In one embodiment, the metalsilicide layer 828 includes a material such as, but not limited to,titanium silicide (TiSi₂), cobalt silicide (CoSi₂), tungsten silicide(WSi₂), or nickel silicide (NiSi or NiSi₂). In an embodiment, a rapidthermal processing (RTP) anneal is used to form the silicide. In thatembodiment, dopants in the silicon layers of the emitter region areactivated in the same RTP process. In one embodiment, the RTP process isperformed in an oxygen-free or low oxygen environment to reduceoxidation of the silicide metal. However, in another embodiment, asilicide process temperature is lower than the temperature of a separateanneal used for dopant activation.

Referring to FIG. 8B, a metal layer 830 is the plated on the metalsilicide layer to form conductive contacts 832 and 834, respectively,for the first silicon regions 110 and the isolated second siliconregions 124. In one embodiment, the metal layer 830 is a copper layer.In one embodiment, the metal silicide layer is chemically activatedprior to plating a metal thereon. In another embodiment, instead ofplating a metal, an aluminum (Al) foil welding process is used tocomplete the contact formation.

It is to be appreciated that the silicidation process for contactformation described in association with FIGS. 8A and 8B, as contrastedto the contact formation described in association with FIG. 6, uses oneless mask. In particular, a seed layer does not need to be directed by amask in the silicidation process since silicide will form only onregions of exposed silicon, which have already been patterned. As such,in an embodiment, the silicidation process is a self-aligned processwhich can be implemented to mitigate alignment issues and, possibly,reduce the pitch achievable for cell contact fabrication.

Perhaps more generally, a process encompassing both of the abovedescribed process flows is described in association with FIG. 9. FIG. 9is a flowchart 900 listing operations in another method of fabricating asolar cell, in accordance with an embodiment of the present disclosure.Referring to operation 902 of the flowchart 900 of FIG. 9, a method offabricating a solar cell involves forming a first silicon layer of afirst conductivity type on a first thin dielectric layer formed on aback surface of a substrate. In an embodiment, this process operationprovides a first emitter region of the solar cell. Referring tooperation 904 of the flowchart 900 of FIG. 9, the method also involvesforming an insulator layer on the first silicon layer. Referring tooperation 906 of the flowchart 900 of FIG. 9, the method also involvesforming a plurality of openings in the insulator layer and the firstsilicon layer, and a corresponding plurality of non-continuous trenchesin the back surface of the substrate. Referring to operation 908 of theflowchart 900 of FIG. 9, the method also involves forming a secondsilicon layer of a second, different, conductivity type on a second thindielectric layer formed in the plurality of non-continuous trenches. Inan embodiment, this process operation provides a second emitter regionof the solar cell.

Although certain materials are described specifically with reference toabove described embodiments, some materials may be readily substitutedwith others with other such embodiments remaining within the spirit andscope of embodiments of the present disclosure. For example, in anembodiment, a different material substrate, such as a group III-Vmaterial substrate, can be used instead of a silicon substrate.Additionally, although reference is made significantly to back contactsolar cell arrangements, it is to be appreciated that approachesdescribed herein may have application to front contact solar cells aswell. In other embodiments, the above described approaches can beapplicable to manufacturing of other than solar cells. For example,manufacturing of light emitting diode (LEDs) may benefit from approachesdescribed herein.

Furthermore, in an embodiment, a cluster plasma enhanced chemical vapordeposition (PECVD) tool can be used to combine many of the abovedescribed process operations in a single pass in a process tool. Forexample, in one such embodiment, up to four distinct PECVD operationsand an RTP operation can be performed in a single pass in a clustertool. The PECVD operations can includes depositions of layers such asthe above described back side P+ polysilicon layer, both front and backside N+ polysilicon layers, and the ARC layer.

Thus, methods of fabricating solar cell emitter regions withdifferentiated P-type and N-type architectures and incorporating dotteddiffusion, and the resulting solar cells, have been disclosed.

Although specific embodiments have been described above, theseembodiments are not intended to limit the scope of the presentdisclosure, even where only a single embodiment is described withrespect to a particular feature. Examples of features provided in thedisclosure are intended to be illustrative rather than restrictiveunless stated otherwise. The above description is intended to cover suchalternatives, modifications, and equivalents as would be apparent to aperson skilled in the art having the benefit of this disclosure.

The scope of the present disclosure includes any feature or combinationof features disclosed herein (either explicitly or implicitly), or anygeneralization thereof, whether or not it mitigates any or all of theproblems addressed herein. Accordingly, new claims may be formulatedduring prosecution of this application (or an application claimingpriority thereto) to any such combination of features. In particular,with reference to the appended claims, features from dependent claimsmay be combined with those of the independent claims and features fromrespective independent claims may be combined in any appropriate mannerand not merely in the specific combinations enumerated in the appendedclaims.

What is claimed is:
 1. A solar cell, comprising: a substrate having alight-receiving surface and a back surface; a first thin dielectriclayer disposed on the back surface of the substrate; a firstpolycrystalline silicon emitter region of first conductivity typedisposed on the first thin dielectric layer; a second thin dielectriclayer disposed over a plurality of non-continuous regions at the backsurface of the substrate; a plurality of isolated second polycrystallinesilicon emitter regions of second conductivity type disposed on thesecond thin dielectric layer; a first conductive contact structureelectrically connected to the first polycrystalline silicon emitterregion; an insulator layer disposed on the first polycrystalline siliconemitter region, wherein the first conductive contact structure isdisposed through the insulator layer, and wherein a portion of thesecond polycrystalline silicon emitter region overlaps the insulatorlayer but is separated from the first conductive contact structure; anda second conductive contact structure electrically connected to theplurality of isolated second polycrystalline silicon emitter regions,wherein the second conductive contact structure is disposed over theplurality of isolated second polycrystalline silicon emitter regions anda first portion of the insulator layer.
 2. The solar cell of claim 1,wherein the portion of the first portion of the insulator layer isdisposed between two non-continuous regions at the back surface of thesubstrate.
 3. The solar cell of claim 1, further comprising a third thindielectric layer between the first polycrystalline silicon emitterregion and at least one of the plurality of isolated secondpolycrystalline silicon emitter regions, the third dielectric layerhaving an uppermost surface co-planar with an uppermost surface of thefirst polycrystalline silicon emitter region.
 4. The solar cell of claim1, wherein each of the plurality of non-continuous regions has a widthapproximately in the range of 30-60 microns, and wherein successive onesof the plurality of non-continuous regions are spaced apart at adistance approximately in the range of 50-300 microns.
 5. The solar cellof claim 1, wherein each of the plurality of non-continuous regions hasa depth approximately in the range of 0.5-10 microns from the backsurface and into the substrate.
 6. The solar cell of claim 1, whereineach of the non-continuous regions has an approximately circular shape.7. The solar cell of claim 1, wherein each of the non-continuous regionshas a texturized surface.
 8. The solar cell of claim 7, wherein thesecond thin dielectric layer is confined to the plurality ofnon-continuous regions and is conformal with the texturized surface ofthe plurality of non-continuous regions.
 9. The solar cell of claim 1,wherein the second thin dielectric layer is physically separated fromthe first conductive contact structure.
 10. The solar cell of claim 1,wherein the first polycrystalline silicon emitter region is laterallyadjacent to at least one of the plurality of isolated secondpolycrystalline silicon emitter region and is electrically isolated fromthe plurality of isolated second polycrystalline silicon emitter regionby the third thin dielectric layer, the third thin dielectric layernon-continuous with the second thin dielectric layer.
 11. The solar cellof claim 10, wherein the third thin dielectric layer has a verticalthickness and a lateral thickness, and the vertical thickness is greaterthan the lateral thickness.
 12. A solar cell, comprising: a substratehaving a light-receiving surface and a back surface; a first thindielectric layer disposed on the back surface of the substrate; a firstpolycrystalline silicon emitter region of N+ conductivity type disposedon the first thin dielectric layer; a second thin dielectric layerdisposed over a plurality of non-continuous regions at the back surfaceof the substrate; a plurality of isolated second polycrystalline siliconemitter region of P+ conductivity type disposed on the second thindielectric layer; a first conductive contact structure electricallyconnected to the first polycrystalline silicon emitter region; aninsulator layer disposed on the first polycrystalline silicon emitterregion, wherein the first conductive contact structure is disposedthrough the insulator layer, and wherein a portion of the plurality ofisolated second polycrystalline silicon emitter region overlaps theinsulator layer but is separated from the first conductive contactstructure; and a second conductive contact structure electricallyconnected to the plurality of isolated second polycrystalline siliconemitter regions, wherein the second conductive contact structure isdisposed over the isolated second polycrystalline silicon emitterregions and a first portion of the insulator layer.
 13. The solar cellof claim 12, wherein the first portion of the insulator layer isdisposed between two non-continuous regions at the back surface of thesubstrate.
 14. The solar cell of claim 12, further comprising a thirdthin dielectric layer between the first polycrystalline silicon emitterregion and the plurality of isolated second polycrystalline siliconemitter regions, the third dielectric layer having an uppermost surfaceco-planar with an uppermost surface of the first polycrystalline siliconemitter region.
 15. The solar cell of claim 12, wherein each of theplurality of non-continuous regions has a width approximately in therange of 30-60 microns, and wherein successive ones of the plurality ofnon-continuous regions are spaced apart at a distance approximately inthe range of 50-300 microns.
 16. The solar cell of claim 12, whereineach of the plurality of non-continuous regions has a depthapproximately in the range of 0.5-10 microns from the back surface andinto the substrate.
 17. The solar cell of claim 12, wherein each of thenon-continuous regions has an approximately circular shape.
 18. Thesolar cell of claim 12, wherein the second thin dielectric layer isphysically separated from the first conductive contact structure. 19.The solar cell of claim 12, wherein the first polycrystalline siliconemitter region is laterally adjacent to the plurality of isolated secondpolycrystalline silicon emitter region and is electrically isolated fromthe plurality of isolated second polycrystalline silicon emitter regionby the third thin dielectric layer, the third thin dielectric layernon-continuous with the second thin dielectric layer.
 20. The solar cellof claim 19, wherein the third thin dielectric layer has a verticalthickness and a lateral thickness, and the vertical thickness is greaterthan the lateral thickness.